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| MASW-005100-1194 HMICTM Silicon PIN Diode Switch RoHs Compliant FEATURES Ultra Broad Bandwidth: 50MHz to 26GHz 1.0 dB Insertion Loss 30 dB Isolation at 20GHz Reliable. Fully Monolithic Glass Encapsulated Construction +33dBm Input Power Rev. V3 DESCRIPTION The MASW-005100-1194 is a SP5T Series-Shunt broad band switch made with M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies. APPLICATIONS These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V/-5 V, TTL controlled PIN diode driver, 50ns switching speeds are achieved. ABSOLUTE MAXIMUM RATINGS TAMB = +25C ( Unless otherwise specified ) PARAMETER OPERATING TEMPERATURE STORAGE TEMPERATURE RF C.W. INCIDENT POWER ( 20 mA ) BIAS CURRENT ( FORWARD ) APPLIED VOLTAGE ( REVERSE ) VALUE - 65C to +150C - 65C to +175C +33dBm 20mA - 25V Note:Exceeding any of these values may result in permanent damage. Maximum operating conditions for combination of RF power, D.C. bias and temperature: +30dBm C.W., 15mA per diode @+85C 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-005100-1194 HMICTM Silicon PIN Diode Switch RoHs Compliant TYPICAL DRIVER CONNECTIONS Rev. V3 CONTROL LEVEL ( DC CURRENT ) CONDITION OF RF OUTPUT J2 -20 mA J3 +20 mA -20 mA J4 +20 mA +20 mA -20 mA J5 J6 J2-J1 Low Loss J3-J1 Isolation Low Loss J4-J1 Isolation Isolation Low Loss J5-J1 Isolation Isolation Isolation Low Loss J6-J1 Isolation Isolation Isolation Isolation Low Loss +20 mA +20 mA +20 mA +20 mA +20 mA +20 mA -20 mA +20 mA Isolation Isolation Isolation Isolation +20 mA +20 mA +20 mA +20 mA +20 mA +20 mA Isolation Isolation Isolation +20 mA +20 mA +20 mA -20 mA Isolation Isolation +20 mA Isolation Electrical Specifications @ TAMB = 25C, 20 mA bias current (on-wafer measurements) RF SPECIFICATIONS PARAMETER INSERTION LOSS ISOLATION INPUT RETURN LOSS OUTPUT RETURN LOSS SWITCHING SPEED FREQUENCY 20GHz 20GHz 20GHz 20GHz 10GHz 1 MIN TYP 0.9 MAX UNITS dB dB dB dB nS 1.4 28 38 22 23 50 Note: 1.) Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390pF - 560pF and a resistor between 150 - 220 to achieve 50ns rise and fall times. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-005100-1194 HMICTM Silicon PIN Diode Switch RoHs Compliant Rev. V3 Typical Microwave Performance INSERTION LOSS 0.000 LOSS ( dB ) -0.200 -0.400 -0.600 -0.800 -1.000 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 FREQUENCY ( GHz ) J2 J3 J4 J5 J6 ISOLATION 0 -10 ISOLATION ( dB ) -20 -30 -40 -50 -60 -70 -80 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 FREQUENCY ( GHz ) J2 3 J3 J4 J5 J6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-005100-1194 HMICTM Silicon PIN Diode Switch RoHs Compliant Rev. V3 Typical Microwave Performance OUTPUT RETURN LOSS 0.000 -5.000 LOSS ( dB ) -10.000 -15.000 -20.000 -25.000 -30.000 -35.000 -40.000 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 FREQUENCY ( GHz ) J2 J3 J4 J5 J6 INPUT RETURN LOSS 0. -5. -10. -15. LOSS -20. (dB) -25. -30. -35. -40. 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 FREQUENCY ( GHz ) J2 4 J3 J4 J5 J6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-005100-1194 HMICTM Silicon PIN Diode Switch RoHs Compliant Rev. V3 Operation of the MASW-005100-1194 Switch The simultaneous application of negative DC current to the Low Loss Port and positive DC current to the remaining Isolated Ports as shown in Figure 1 achieves operation of the MASW-005100-1194 diode switch. The backside area of the die is the RF and DC return ground plane. The DC return is achieved on common Port J1. Constant current sources should supply the DC control currents. The voltages at these points will not exceed 1.5 volts (1.2 volts typical) for supply currents up to 20 mA. In the Low Loss state, the Series Diode must be forward biased and the Shunt Diode reverse biased. For all the isolated ports, the Shunt Diode is forward biased and the Series Diode is reverse biased. The bias network design should yield >30 dB RF to DC isolation. Best Insertion Loss, P1dB, IP3, and switching speed are achieved by using a voltage pull-up resistor in the DC return path, ( J1 ). A minimum value of | -2V | is recommended at this return node, which is achievable with a standard , 65V TTL controlled PIN diode driver. A typical DC bias schematic for 2-18 GHz operation is shown in Figure 1. 2 - 18 GHz Bias Network Schematic J1 39 pF 22 pF DC Bias 22 nH 39 pF 100 22 nH HMIC Switch Die J6 22 pF J2 J5 J4 J3 Fig. 1 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-005100-1194 HMICTM Silicon PIN Diode Switch RoHs Compliant ASSEMBLY INSTRUCTIONS Cleanliness These chips should be handled in a clean environment free of organic contamination. Electro-Static Sensitivity The MASW-00 Series PIN switches are ESD, Class 1A sensitive (HBM). The proper ESD handling procedures must be used. Rev. V3 Wire Bonding Thermosonic wedge wire bonding using 0.003" x 0.00025" ribbon or 0.001" diameter gold wire is recommended. A stage temperature of 150C and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required. RF ribbon and wire bonds should be kept as short as possible to minimize parasitic inductance. Mounting These chips have Ti-Pt-Au back metal. They can be die mounted with a 80Au/20Sn or electrically conductive Ag epoxy. Mounting surface must be flat and clean of oils and contaminants. Eu Eutectic Die Attachment An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255C and a tool tip temperature of 265C. When hot gas is applied, the tool tip temperature should be 290C. The chip should not be exposed to temperatures greater than 320C for more than 10 seconds. No more than 3 seconds should be required for the die attachment. Silver Epoxy Die Attachment Assembly should be preheated to 125C-150C. A Controlled thickness of 2 mils is recommended for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure complete coverage. Cure epoxy per manufacturer's recommended schedule. 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-005100-1194 HMICTM Silicon PIN Diode Switch RoHs Compliant Rev. V3 MASW-005100-1194 Chip Dimensions A B DIM A B C D Chip Dimensions* INCHES 0.0680 0.0340 0.0580 0.0370 0.0295 0.0295 0.0325 .005 X .005 0.005 M 1723 858 1473 938 750 750 825 120 X 120 127 C G D E F G All Pads Thickness F E *All chip dimension tolerances are .0005" ORDERING INFORMATION Part Number MASW-005100-11940W MASW-005100-11940G Package Waffle Pack Gel Pack 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. |
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